Samsung Electronics has announced the start of mass production of the first chips DDR4 8 -gigabit (Gb) manufactured with the process to10 nanometers . These chips will be used in memory modules RAM DDR4 next generation of Korean manufacturer and reach the market sooner rather than later.
With this announcement, Samsung opens the door for the first time at 10 nanometers in the race for DDR4 memory scaling. Samsung has achieved this milestone in the industry thanks to its special manufacturing process in a process using immersion ArF (argon fluorato) without using equipment EUV (extreme ultra violet). In this way, Samsung not only establishes the first chips of DDR4 memory to 10 nanometers in the industry, but they also surpass themselves halving lithography chips in less than two years (Samsung was also the first make chips DDR3 4Gb (gigabit) to 20 nanometers in 2014).
The best part of this milestone is no doubt that the wafers will now more profitable chips, which affects manufacturing costs for Samsung and therefore in the final product price. According to estimates of the company, if we compare the current process chip manufacturing DDR4 8Gb 10nm with which they had before chips DDR3 4Gb to 20 nm, it is used in about 30% more surface wafer.
Samsung 10nm DRAM chips Vs NAND DRAM
Let’s make a little explanation more technical level, more than anything else so you can see the difference of the DRAM chips used in RAM and NAND chips used in SSDs, for example.While the NAND Flash is one transistor for each memory cell in DRAM chips are a condenser and a transistor, linked together bi directionally and, generally, with the capacitor physically located above the transistor.
In the case of the new chips to 10 nanometers another difficulty is added in manufacturing, and to be stacked very close capacitors cylindrical (X capacitors) containing large electrical loads up transistors as 12 nanometers wide , creating more than 8,000 million cells per chip.Almost nothing, huh?
Samsung has created this lithograph satisfactorily using a proprietary design technology circuitry (so you will not see this technology in other manufacturers unless the licensee) and a lithograph Quad drawing. With this quad drawing, the use of photolithography equipment that Samsung already had from previous generations, saving much manufacturing cost because there has been little investment in new equipment is allowed.
In addition to the above, the use of an arrangement of dielectric layers refined causes a substantial improvement in final yield these DRAM chips 10 nanometers is achieved.Samsung engineers have managed to apply several thin dielectric layers that provide ultra high uniformity in the thickness of just one digit Angstrom (ten billionths of a meter, 0.000,000,000,1 meters. In other words, a centimeter is 10 million Angstroms).
It is expected that we will see the first commercial products with these new Samsung 8Gb DRAM chips to 10 nm in the fourth quarter of this year, applied to both mobile devices the company and RAM memories for the consumer market.